{"id":8619,"date":"2021-03-11T10:14:20","date_gmt":"2021-03-11T01:14:20","guid":{"rendered":"https:\/\/www.syu.ac.kr\/rnd\/?page_id=8619"},"modified":"2023-08-28T17:38:36","modified_gmt":"2023-08-28T08:38:36","slug":"ai-convergence-research-center","status":"publish","type":"page","link":"https:\/\/www.syu.ac.kr\/rnd\/research-academic-department\/research-institute\/ai-convergence-research-center\/","title":{"rendered":"\uc778\uacf5\uc9c0\ub2a5\uc735\ud569\uc5f0\uad6c\uc18c"},"content":{"rendered":"<h2 class=\"md_pg_title mb40\"><span class=\"text\">\uc778\uacf5\uc9c0\ub2a5<span class=\"bold\">\uc735\ud569\uc5f0\uad6c\uc18c<\/span><\/span><\/h2>\n<div class=\"md_bs_tabbx one_pg_tab mb45\">\n<ul>\n<li class=\"active\"><span class=\"tab_item\"><span class=\"itembx\"><span class=\"tblbx\"><a href=\"#;\">\uc5f0\uad6c\uc18c\uc7a5 \uc18c\uac1c<\/a><\/span><\/span><\/span><\/li>\n<li><span class=\"tab_item\"><span class=\"itembx\"><span class=\"tblbx\"><a href=\"#;\">\uc5f0\uad6c\uc18c \uc18c\uac1c<\/a><\/span><\/span><\/span><\/li>\n<\/ul>\n<\/div>\n<div class=\"fade_rowbx\">\n<ul>\n<!-- \uc5f0\uad6c\uc18c\uc7a5\uc18c\uac1c --><\/p>\n<li class=\"active\">\n<h2 class=\"ab_text\">\uc5f0\uad6c\uc18c\uc7a5 \uc18c\uac1c<\/h2>\n<div class=\"md_people_probx mb50\">\n<div class=\"top_contbx\">\n<div class=\"thum wide_ig\"><img decoding=\"async\" src=\"\/wp-content\/uploads\/2021\/03\/Prof_MGYang.png\" alt=\"\uc778\uacf5\uc9c0\ub2a5\uc735\ud569\uc5f0\uad6c\uc18c \uc5f0\uad6c\uc18c\uc7a5 \uc591\ubbfc\"><\/div>\n<div class=\"cont\">\n<h3 class=\"md_vb_tit f_n\">\uc548\ub155\ud558\uc2ed\ub2c8\uae4c? <span class=\"color_blue f_b\">\uc778\uacf5\uc9c0\ub2a5\uc735\ud569\uc5f0\uad6c\uc18c<\/span>\ub97c \ubc29\ubb38\ud574 \uc8fc\uc154\uc11c \uac10\uc0ac\ud569\ub2c8\ub2e4.<\/h3>\n<div class=\"name\">\uc5f0\uad6c\uc18c\uc7a5 \uc591\ubbfc\uaddc<\/div>\n<\/p><\/div>\n<\/p><\/div>\n<div class=\"study_inline\">\n<ul>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">\uc131\uba85 : \uc591\ubbfc\uaddc<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">\uc774\uba54\uc77c : <a href=\"mailto:dbrophd@syu.ac.kr\" class=\"underline\">dbrophd@syu.ac.kr<\/a><\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">\uc18c\uc18d : \uc0bc\uc721\ub300\ud559\uad50 \uc9c0\ub2a5\uc815\ubcf4\uc735\ud569\ud559\ubd80<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">\uc5f0\ub77d\ucc98 : 02-3399-1928<\/span><\/li>\n<\/ul><\/div>\n<\/p><\/div>\n<h3 class=\"md_s_tit sy_tit mb15\">\ud559\ub825<\/h3>\n<div class=\"md_tbl_scrollbx mb45\">\n<table class=\"md_main_tbl\">\n<caption>\uc5f0\uad6c\uc18c\uc7a5\uc758 \uae30\uac04, \ub0b4\uc6a9\uc744 \ub098\ud0c0\ub0b4\ub294 \ud14c\uc774\ube14\uc785\ub2c8\ub2e4.<\/caption>\n<colgroup>\n<col style=\"width:25%;\">\n<col style=\"width:75%;\">\n\t\t<\/colgroup>\n<thead>\n<tr>\n<th scope=\"col\">\uae30\uac04<\/th>\n<th scope=\"col\">\ub0b4\uc6a9<\/th>\n<\/tr>\n<\/thead>\n<tbody>\n<tr>\n<th scope=\"row\">2004<\/th>\n<td>B.S, Physics, Korea University (2004)<\/td>\n<\/tr>\n<tr>\n<th scope=\"row\">2006<\/th>\n<td>M.S, Electrical and Electronic Engineering,Yonsei University<\/td>\n<\/tr>\n<tr>\n<th scope=\"row\">2011<\/th>\n<td>Ph.D, Electrical and Electronic Engineering,Yonsei University <\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<h3 class=\"md_s_tit sy_tit mb15\">\uc8fc\uc694 \uc5f0\uad6c\ubd84\uc57c<\/h3>\n<ul class=\"mb45\">\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">\ub274\ub85c\ubaa8\ud53d \ucef4\ud4e8\ud305<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">3D\ud06c\ub85c\uc2a4 \ud3ec\uc778\ud2b8 RRAM \uae30\uc220<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">\ud06c\ub85c\uc2a4 \ud3ec\uc778\ud2b8 \uc120\ud0dd\uc18c\uc790 \uac1c\ubc1c<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">\ub274\uba54\ubaa8\ub9ac \ub514\ubc14\uc774\uc2a4 \uc81c\uc791 \ubc0f \uc2e0\ub8b0\uc131 \ud3c9\uac00<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">MNIST \uac1c\ubc1c<\/span><\/li>\n<\/ul>\n<h3 class=\"md_s_tit sy_tit mb15\">\ub17c\ubb38<\/h3>\n<ul class=\"mb15\">\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">1. TH Kim, MK Yang, &#8220;Characteristics of Resistive Switching of SRO\/SrZrO3\/Pt Stack Processed at Full Room Temperature&#8221; Electronic Materials Letters 17 (1), 63-67 (2021) <\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">2. Hyemi Han, Yoo Jin Lee, Jihoon Kyhm, Jae Seung Jeong, Jae\u2010Hoon Han, Min Kyu Yang, Kyung Min Lee, Yeongyu Choi, Tae\u2010Hoon Yoon, Hyunsu Ju, Suk\u2010kyun Ahn, Jung Ah Lim &#8220;High\u2010Performance Circularly Polarized Light\u2010Sensing Near\u2010Infrared Organic Phototransistors for Optoelectronic Cryptographic Primitives&#8221; Advanced Functional Materials 30 (52), 2006236 (2020)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">3. GS Lee, JS Jeong, MK Yang, JD Song, YT Lee, H Ju &#8220;Non-volatile memory behavior of interfacial InOx layer in InAs nano-wire field-effect transistor for neuromorphic application&#8221; Applied Surface Science, 148483 (2020)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">4. MK Yang, JK Lee &#8220;CNT\/AgNW multilayer electrodes on flexible organic solar cells&#8221; Electronic Materials Letters 16 (6), 573-578 (2020)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">5. JJ Ryu, K Jeon, G Kim, MK Yang, C Kim, DS Jeong, GH Kim &#8220;Highly Linear and Symmetric Weight Modification in HfO2\u2010Based Memristive Devices for High\u2010Precision Weight Entries&#8221; Advanced Electronic Materials 6 (9), 2000434 (2020)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">6. H Ju, MK Yang &#8220;Duality characteristics of bipolar and unipolar resistive switching in a Pt\/SrZrO3\/TiOx\/Pt stack&#8221; AIP Advances 10 (6), 065221 (2020)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">7. DK Lee, GH Kim, H Sohn, MK Yang &#8220;Ti-doped alumina based reliable resistive switching in sub-\u03bcA regime&#8221; Applied Physics Letters 116 (21), 213503 (2020)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">8. DK Lee, GH Kim, H Sohn, MK Yang &#8220;Role of an Interfacial Layer in Ta2O5\u2010Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation&#8221; physica status solidi (RRL)\u2013Rapid Research Letters 14 (3), 1900646 (2020)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">9. MK Yang &#8220;Improved Resistive Memory Switching of NiO x\/MnOx Double Stack&#8221; Journal of the Korean Physical Society 76 (3), 190-193 (2020)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">10. DK Lee, GH Kim, H Sohn, MK Yang &#8220;Positive effects of a Schottky-type diode on unidirectional resistive switching devices&#8221;\u3000Applied Physics Letters 115 (26), 263502\u3000(2019\uff09<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">11. MK Yang, GH Kim \u201cPost\u2010Annealing Effect on Resistive Switching Performance of a Ta\/Mn2O3\/Pt\/Ti Stacked Device\u201dphysica status solidi (RRL)\u2013Rapid Research Letters 12 (6), 1800031 (2018)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">12. G H Kim, H Ju, MK Yang, DK Lee, JW Choi, JH Jang, SG Lee, IS Cha \u201cFour\u2010Bits\u2010Per\u2010Cell Operation in an HfO2\u2010Based Resistive Switching Device\u201d, Small 13 (40), (2017)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">13. Y Koo, S Lee, S Park, M Yang, H Hwang \u201cSimple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application \u201cIEEE Electron Device Letters 38 (5), 568-571 (2017)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">14. M L\u00fcbben, S Menzel, SG Park, M Yang, R Waser, I Valov \u201cSET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2\/Ag based systems Nanotechnology 28 (13), 135205, (2017)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">15. MK Yang, H Ju, GH Kim, JK Lee, HC Ryu \u201cDirect evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film Scientific reports 5, 14053 (2015)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">16. MK Yang, GH Kim, H Ju, JK Lee, HC Ryu \u201cThe interfacial layer effect on bi-stable resistive switching phenomenon in MnOx thin film \u201cApplied Physics Letters 107 (5), 053503 (2015)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">17. MK Yang, GH Kim, H Ju, JK Lee, HC Ryu \u201cAn analysis of \u201cnon-lattice\u201d oxygen concentration effect on electrical endurance characteristic in resistive switching MnOx thin film\u201d Applied Physics Letters 106 (5), 053504 (2015)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">18.. D.J. Seong, M. K. Yang, Hyunsu Ju, J.M. Lee, et al. \u201cHighly Reliable ReRAM Technology with Encapsulation Process for 20nm and Beyond\u201d, International Memory Workshop (IMW), 42-43 (2013)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">19. Chan-Rok Park, Sun-Young Choi, Yil-Hwan You, Min Kyu Yang, Seung-Muk Bae, Jeon-Kook Lee, et al. \u201cImpedance Spectroscopy Characterization in Bipolar Ta\/MnOx\/Pt Resistive Switching Thin Films\u201d , Journal of the American Ceramic Society Vol. 96 Issue 4, pages 1234-1239 (2013)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">20. S.G. Park, M.K. Yang, Hyunsu Ju, D.J. Seong, et al.\u201cA Non-Linear ReRAM cell with Sub-1uA Ultra Low Operating Current for High Density Vertical Resistive Memory (VRRAM)\u201d, International Electron Devices Meeting (IEDM), 20.8.1-4 (2012)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">21. Choi Sunyoung, Min Kyu Yang, and Jeon-Kook Lee \u201cEffect of oxygen annealing on the set voltage distribution Ti\/MnO2\/Pt resistive switching devices&#8221;, Korean Journal of Materials Research, Vol.22, No.8, (2012)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">22. I.G. Baek, C.J. Park, Hyunsu Ju, D.J. Seong, M. K. Yang et al,\u201cRealization of Vertical Resistive Memory (VRRAM) using Cost Effective 3D Process\u201d, International Electron Devices Meeting (IEDM), 31.8.1-4 (2011)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">23. Min Kyu Yang, Jae-Wan Park, and Jeon-Kook Lee \u201cResistance Switching of Heteroepitaxial Cr-Doped SrZrO3 Thin Films\u201d, Metals and Materials International Vol 17(4) P 637-640 (2011)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">24. Min Kyu Yang, Jae-Wan Park, and Jeon-Kook Lee \u201cDeposition of Cr-doped SrZrO3 thin films on Si substrates and their resistance switching characteristics\u201d Journal of Ceramic Processing Research, Vol 12(3) P 233-235 (2011)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">25. Min Kyu Yang, Jae-Wan Park, Tae Kuk Ko, and Jeon-Kook Lee \u201cResistive switching characteristics of TiN\/MnO2\/Pt memory devices\u201d, Physica Status Solidi (RRL) 4, No.8-9 233-235 (2010)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">26. Min Kyu Yang , Kyooho Jung, Yongmin Kim, Tae Kuk Ko, Hyunsik Im, Jae-Wan Park , and Jeon-Kook Lee \u201cVoltage pulse induced resistance switching characteristics in a Cr-doped SrZrO3\u201d Japanese Journal of Applied Physics (JJAP) 49, 111101 (2010)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">27. Min Kyu Yang, Jae-Wan Park, Tae Kuk Ko, and Jeon-Kook Lee \u201cResistive Switching Behavior of Cr-doped SrZrO3 Perovskite Thin Films by Oxygen Pressure Change&#8221;, Korean Journal of Materials Research, Vol.20, No.5, p. 257-261 (2010)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">28. Min Kyu Yang, Jae-Wan Park, Tae Kuk Ko, and Jeon-Kook Lee \u201cResistive Switching Properties of Cr-doped SrZrO3 Thin Film on Si substrate&#8221;, Korean Journal of Materials Research, Vol.20, No.5, p. 241-245 (2010)<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">29. Hyung Seob Min, Min Kyu Yang, and Jeon-Kook Lee \u201cImproved optical and electrical properties of rf sputtered Al doped ZnO films on polymer substrates by low damage processes\u201d &#8220;, J. Vac. Sci. Technol. A 27(2), (2009).<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">30. Min Kyu Yang, Jae-Wan Park, Tae Kuk Ko, and Jeon-Kook Lee \u201cBipolar resistive switching behaviour in Ti\/MnO2\/Pt structure for non-volatile memory devices&#8221;, Applied Physics Letter, 95, 042105 (2009).<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">31. Jae-Wan Park, Min Kyu Yang, and Jeon-Kook Lee  &#8220;Electrode Dependence of Bipolar Resistive Switching in SrZrO3:Cr Perovskite Film-Based Memory Devices&#8221;, Electrochemical and Solid-State Letters, 11, H226-H229 (2008).<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">32. Jae-Wan Park, Min Kyu Yang, and Jeon-Kook Lee \u201cEffects of Switching Parameters on Resistive Switching Behaviors of Polycrystalline SrZrO3:Cr-Based Metal\u2013Oxide\u2013Metal Structures&#8221;, IEEE T ELECTRON DEVICE LETTERS, 55, 7 (2008).<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">33. Jae-Wan Park, Kyooho Jung, Min Kyu Yang, Jong-Wan Park, and Jeon-Kook Lee  &#8220;Set Power Dependency on the Resistive Switching in Cr-doped SrZrO3 Thin Films for Nonvolatile Memory Devices&#8221; IEEE International Symposium on May 2007 P.46-47<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">34. Jae-Wan Park, Kyooho Jung, Min Kyu Yang, Jeon-Kook Lee, Dal-Young Kim, and Jong-Wan Park &#8220;Resistive switching characteristics and set-voltage dependence of low-resistance state in sputter-deposited SrZrO3:Cr memory films&#8221;, J. Appl. Phys. 99, 124102 (2006).<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">35. Jae-Wan Park, Jong-Wan Park, Min Kyu Yang, Kyooho Jung, Dal-Young Kim, and Jeon-Kook Lee &#8220;Low-voltage resistive switching of polycrystalline SrZrO3:Cr thin films grown on Si substrates by off-axis rf sputtering&#8221;, J. Vac. Sci. Technol. A 24, 970 (2006).<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">36. Jae-Wan Park, Jong-Wan Park, Kyooho Jung, Min Kyu Yang, and Jeon-Kook Lee  &#8220;Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications&#8221;, J. Vac. Sci. Technol. B 24, 2205 (2006).<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">37. Kyooho Jung, Hongwoo Seo, Nambin Kim, Yongmin Kim, Hyunsik Im, Jae-Wan Park, Min Kyu Yang, and Jeon-Kook Lee &#8220;Temperature-dependent switching current of Cr-doped SrZrO3\/SrRuO3 deposited for ReRAM applications by using PLD&#8221;, J. Korean Phys. Soc. 49, 1071 (2006).<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">38. Min Kyu Yang, Dal-Young Kim, Jae-Wan Park, and Jeon-Kook Lee  &#8220;Resistive switching behavior of Cr-doped SrZrO3 perovskite thin films for random access memory applications&#8221;, J. Korean Phys. Soc. 47, S313 (2005).<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">38. Min Kyu Yang, Hyu Seung Yang, Jong-Ku Park,Keun Ryu,Yong-Bok Lee and Jeon-Kook Lee  &#8220;Self-lubricating composite coating on air foil bearing shaft by Hollow Cathode Plasma Jet&#8221;  Materials Science Forum Vols. 486-487 (2005) pp.157-160<\/span><\/li>\n<\/ul>\n<h4 class=\"md_sts_tit mb10\">\ud2b9\ud5c8<\/h4>\n<ul>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">1.Methods of forming semiconductor devices having threshold switching devices US Patent 10,714,685<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">2.Variable resistance memory device and method of manufacturing the same US Patent 10,186,552<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">3. Variable resistance memory device and method of manufacturing the same, US 10,186,552 B2<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">4. Method of forming semiconductor devices having threshold switching devices, US20180040818<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">5. Methods of operating variable resistance memory devices, US 9,378,811<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">6. Three-dimensional resistive random access memory devices, methods of operating the same, and methods of fabricating the same, US 9,093,369<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">7. Resistive random access memory devices having variable resistance layers and related methods<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">8. NONVOLATILE MEMORY CELL AND NONVOLATILE MEMORY DEVICE INCLUDING THE SAME, US 9,059,395<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">9. Memroy Device and Memroy Cell Array, KOR 1020140012210<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">10. Thin film structure for resistive random access memory having high device yield,  KOR 10100944100009.<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">11. Thin film structure for resistive random access memory device having narrow set voltage window and the fabrication method thereof, KOR 1009638280000 <\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">12. Fabrication method of room temperature processed thin film structure multi-layered with metal oxide for high device yield resistive random access memory device, KOR 1010094410000<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">13. Thin films structure for resistive random access memory and fabrication method thereof, KOR 1007245280000<\/span><\/li>\n<\/ul>\n<\/li>\n<p><!-- \uc5f0\uad6c\uc18c\uc7a5\uc18c\uac1c --><br \/>\n<!-- \uc5f0\uad6c\uc18c\uc18c\uac1c --><\/p>\n<li>\n<h2 class=\"ab_text\">\uc5f0\uad6c\uc18c\uc18c\uac1c<\/h2>\n<h3 class=\"md_s_tit sy_tit mb15\">\uc5f0\uad6c\uc18c\uba85<\/h3>\n<ul class=\"mb45\">\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">\ud55c\uae00\uba85 : \uc778\uacf5\uc9c0\ub2a5\uc735\ud569\uc5f0\uad6c\uc18c<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">\uc601\ubb38\uba85 : AI Convergence Research Center<\/span><\/li>\n<\/ul>\n<h3 class=\"md_s_tit sy_tit mb15\">\uc5f0\uad6c\uc18c \uc124\ub9bd \ubc30\uacbd \ubc0f \ubaa9\uc801<\/h3>\n<ul class=\"mb45\">\n<li class=\"md_txt_bullet\"><span class=\"text\">\uad6d\uac00 \ubbf8\ub798 \uc131\uc7a5 \ub3d9\ub825\uc758 \uac70\uc810\uc73c\ub85c\uc11c \uc778\uacf5\uc9c0\ub2a5 \ubc18\ub3c4\uccb4\ub294 \uc9c0\uc18d\uc801\uc778 \uad6d\uac00\ud575\uc2ec\uc6d0\ucc9c\uae30\uc220 \ud655\ubcf4\uc640 \ub354\ubd88\uc5b4, \uc6b0\ub9ac\ub098\ub77c \uc0b0\ud559\uc5f0 \uae30\uc220\uc5ed\ub7c9\uc744 \uacb0\uc9d1\ud558\uc5ec \ubaa8\ubc14\uc77c, \uc790\ub3d9\ucc28, IoT, \uc2a4\ub9c8\ud2b8 \uac00\uc804\uc5d0 \ub300\ud55c \uc9d1\uc911\uc744 \uc2dc\uc791\uc73c\ub85c \uace0\ubd80\uac00\uac00\uce58\uc758 \uc778\uacf5\uc9c0\ub2a5 \ubc18\ub3c4\uccb4 \uc2e0\uc0b0\uc5c5\uc744 \ucc3d\ucd9c\ud568\uc73c\ub85c\uc368 \uc6b0\ub9ac\ub098\ub77c\uac00 \uc778\uacf5\uc9c0\ub2a5 \ubc18\ub3c4\uccb4 \uc138\uacc4\uc2dc\uc7a5 \uc810\uc720\uc728 \uc6b0\uc704\uc5d0 \uc62c\ub77c\uc11c\ub294\ub370 \uc788\uc5b4\uc11c \uc120\ubd09\uc7a5\uc758 \uc5ed\ud560\uc744 \ud560 \uac83\uc774\ub2e4. \uc774\uc5d0 \uc778\uacf5\uc9c0\ub2a5\uc735\ud569 \uc5f0\uad6c\uc18c \uac1c\uc18c\ub97c \ud1b5\ud55c \uc778\uacf5\uc9c0\ub2a5 \uc804\uc790\uc18c\uc790\uc758 \uc6d0\ucc9c\uae30\uc220\uc744 \ud655\ubcf4\ud558\ub294 \uac83\uc774 \uc774 \uc5f0\uad6c\uc18c\uc758 \uc124\ub9bd \ubaa9\uc801\uc774\ub2e4.<\/span><\/li>\n<\/ul>\n<h3 class=\"md_s_tit sy_tit mb15\">\uc5f0\ud601<\/h3>\n<ul class=\"mb45\">\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">2019.4. \uc9c0\ub2a5\ud615\uc804\uc790\uc18c\uc790\uc5f0\uad6c\uc2e4 \uac1c\uc18c<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">2021.1. \ubd80\uc124\uc5f0\uad6c\uc18c\ub85c \uc2b9\uae09<\/span><\/li>\n<li class=\"md_txt_bullet\"><span class=\"bullet\">\u2022<\/span><span class=\"text\">2021.2. \uc778\uacf5\uc9c0\ub2a5\uc735\ud569\uc5f0\uad6c\uc18c\ub85c \uac1c\uba85<\/span><\/li>\n<\/ul>\n<\/li>\n<p><!-- .\uc5f0\uad6c\uc18c\uc18c\uac1c -->\n<\/ul>\n<\/div>\n","protected":false},"excerpt":{"rendered":"<p>\uc778\uacf5\uc9c0\ub2a5\uc735\ud569\uc5f0\uad6c\uc18c \uc5f0\uad6c\uc18c\uc7a5 \uc18c\uac1c \uc5f0\uad6c\uc18c \uc18c\uac1c \uc5f0\uad6c\uc18c\uc7a5 \uc18c\uac1c \uc548\ub155\ud558\uc2ed\ub2c8\uae4c? \uc778\uacf5\uc9c0\ub2a5\uc735\ud569\uc5f0\uad6c\uc18c\ub97c \ubc29\ubb38\ud574 \uc8fc\uc154\uc11c \uac10\uc0ac\ud569\ub2c8\ub2e4. \uc5f0\uad6c\uc18c\uc7a5 \uc591\ubbfc\uaddc \u2022\uc131\uba85 : \uc591\ubbfc\uaddc \u2022\uc774\uba54\uc77c : dbrophd@syu.ac.kr \u2022\uc18c\uc18d : \uc0bc\uc721\ub300\ud559\uad50 \uc9c0\ub2a5\uc815\ubcf4\uc735\ud569\ud559\ubd80 \u2022\uc5f0\ub77d\ucc98 : 02-3399-1928 \ud559\ub825 \uc5f0\uad6c\uc18c\uc7a5\uc758 \uae30\uac04, \ub0b4\uc6a9\uc744 \ub098\ud0c0\ub0b4\ub294 \ud14c\uc774\ube14\uc785\ub2c8\ub2e4. \uae30\uac04 \ub0b4\uc6a9 2004 B.S, Physics, Korea University (2004) 2006 M.S, Electrical and Electronic Engineering,Yonsei University 2011 Ph.D, Electrical and Electronic Engineering,Yonsei University [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":19,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_acf_changed":false,"footnotes":""},"class_list":["post-8619","page","type-page","status-publish","hentry"],"acf":[],"_links":{"self":[{"href":"https:\/\/www.syu.ac.kr\/rnd\/wp-json\/wp\/v2\/pages\/8619","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.syu.ac.kr\/rnd\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.syu.ac.kr\/rnd\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.syu.ac.kr\/rnd\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.syu.ac.kr\/rnd\/wp-json\/wp\/v2\/comments?post=8619"}],"version-history":[{"count":5,"href":"https:\/\/www.syu.ac.kr\/rnd\/wp-json\/wp\/v2\/pages\/8619\/revisions"}],"predecessor-version":[{"id":11192,"href":"https:\/\/www.syu.ac.kr\/rnd\/wp-json\/wp\/v2\/pages\/8619\/revisions\/11192"}],"up":[{"embeddable":true,"href":"https:\/\/www.syu.ac.kr\/rnd\/wp-json\/wp\/v2\/pages\/19"}],"wp:attachment":[{"href":"https:\/\/www.syu.ac.kr\/rnd\/wp-json\/wp\/v2\/media?parent=8619"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}